Power Transistor is designed for general–purpose switching and amplifier applications.

• DC Current Gain Specified to 10 Amperes
• High Current Gain — Bandwidth Product —fT = 2.0 MHz (Min) @ IC = 500 mAdc

Specification:

• Transistor Polarity: PNP
• Collector−Emitter Voltage (VCEO): 60VDC
• Collector−Base Voltage (VCBO) :70VDC
• Emitter−Base Voltage (VEBO): 5VDC
• Continuous Collector Current (Ic): 10ADC
• Continuous Base Current (Ib): 6ADC
• Power Dissipation (Pd): 75W
• Brand/Make: ST
• Operating Temperature Range: -55 - +150°C
• DC Current Gain (hFE) :20-70